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| 2SD1071_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – HIGH VOLTAGE POWER AMPLIFIER | |||
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2SD1071
Preliminary NPN EPITAXIAL SILICON TRANSISTOR
ï® ABSOLUTE MAXIMUM RATINGS (TC=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
300
V
Collector to Emitter Voltage
VCEO
300
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
6
A
Base Current
IB
2.5
A
Collector Dissipation
PC
40
W
Junction Temperature
TJ
+150
ï°C
Storage Temperature
TSTG
-40~+150
ï°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θJC
ï® ELECTRICAL CHARACTERISTICS (TC =25°C)
RATINGS
3
UNIT
°C/W
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(SAT)
VBE(SAT)
TEST CONDITIONS
ICBO=1mA
ICEO=1mA
IEBO=150mA
VCBO=250V
VEBO=6V
VCE=2V, IC=4A
IC=4A, IB=15mA
MIN TYP MAX UNIT
300
V
300
V
6
V
0.1 mA
150 mA
500
1.5 V
2.0 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R203-043.b
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