2SC945_09 Datasheet, PDF (2/4 Pages) Unisonic Technologies – AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

2SC945
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
V_CBO
60
V
Collector-Emitter Voltage
V_CEO
50
V
Emitter-Base Voltage
Collector Dissipation(Ta=25°C)
V_EBO
5
V
P_C
250
mW
Collector Current
I_C
150
mA
Base Current
I_B
50
mA
Junction Temperature
T_J
125
°С
Storage Temperature
T_STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage BV_CBO I_C=100μA, I_E=0
60
Collector-Emitter Breakdown Voltage BV_CEO I_C=10mA, I_B=0
50
Collector Cut-Off Current
I_CBO V_CB=40V, I_E=0
Emitter Cut-Off Current
I_EBO V_EB=3V, I_C=0
DC Current Gain
h_FE V_CE=6V, I_C=1mA
90
Collector-Emitter Saturation Voltage V_CE(SAT) Ic=100mA, I_B=10mA
Current Gain Bandwidth Product
f_T V_CE=10V, I_C=50mA
100
Output Capacitance
C_ob V_CB=10V, I_E=0, f=1MHz
Noise Figure
NF
I_C=-0.1mA, V_CE=6V
R_G=10kΩ, f=100Hz
„ CLASSIFICATION OF h_FE
RANK
RANGE
R
90-180
Q
135-270
P
200-400
TYP
0.1
190
2.0
4.0
MAX
100
100
600
0.3
3.0
6.0
UNIT
V
V
nA
nA
V
MHz
pF
dB
K
300-600
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-005,C