2SC5353 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

2SC5353
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Tc = 25Â¥)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
900
V
Collector-Emitter Voltage
V_CEO
800
V
Emitter-Base Voltage
V_EBO
7
V
Collector Current
DC
I_C
3
A
Pulse
I_CP
5
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
I_B
1
A
Ta = 25Â¥
2.0
T_C = 25Â¥
P_D
25
W
T_J
+150
Ċ
T_STG
-40 ~ +150
Ċ
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc = 25Â¥)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
TEST CONDITIONS
BV_CBO I_C=1 mA, I_E = 0
BV_CEO I_C=10 mA, I_B = 0
I_CBO VCB=720V, IE= 0
I_EBO V_EB=7V, I_C= 0
h_FE(1) V_CE=5 V, I_C=1 mA
h_FE(2) V_CE=5 V, I_C=0.15 A
V_CE(SAT) I_C=1.2 A, I_B=0.45 A
V_BE(SAT) I_C=1.2 A, I_B=0.24 A
Output
MIN TYP MAX UNIT
900
V
800
V
100 µA
10 µA
10
15
1.0 V
1.3 V
Rise time
Switching time
Storage time
t_R
t_STG
20µS
I_C
Input ^IB1
I _B2
0.7
µS
4.0
VCC•360V
Fall time
t_F
I_B1 = 0.24 A, I_B2 = −0.48 A,
0.5
duty cycle ≤ 1%


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QW-R203-031,A