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| 2SC4242 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTOR(7A,400V,40W) | |||
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2SC4242
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage
VCEO
400
V
Collector-Base Voltage
VCBO
450
V
Emitter-Base Voltage
VEBO
8.0
V
Collector Current
Continuous
IC
7.0
A
Peak
ICM
14
Base Current
Total Power Dissipation @TC=25Â¥
Derate Above 25Â¥
IB
2.0
A
40
W
PD
0.32
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Thermal Resistance Junction -Case
SYMBOL
ÇJC
RATINGS
4
 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
BVCEO ICEO=100mA, IB=0
Collector-Base Breakdown Voltage
BVCBO ICBO=1.0mA, IE=0
Emitter-Base Breakdown Voltage
BVEBO IEBO=1.0mA, IC=0
Collector Cutoff Current
ICBO VCBO=450V, IE=0
Emitter Cutoff Current
ON CHARACTERISTICS
IEBO VEBO=8.0V, IC=0
DC Current Gain
hFE IC=4.0A, VCE=5.0V
Collector-Emitter Saturation Voltage
VCE (SAT) IC=4.0A, IB=800mA
Base-Emitter Saturation Voltage
VBE (SAT) IC=4.0A, IB=800mA
SWITCHING CHARACTERISTICS
On Time
Storage Time
Fall Time
tON
tS
VCC=150V, IC=5.0A
IB1= -IB2=1.0A, RL=30Ƹ
tF
Note: Pulse Test: Pulse Width=300µs, Duty Cycle ⤠2.0%
MIN TYP MAX UNIT
400
V
450
V
8.0
V
100 µA
100 µA
10
0.8
V
1.2
V
1.0 µs
2.5 µs
0.5 µs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R203-033.A
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