2SC4027_09 Datasheet, PDF (2/5 Pages) Unisonic Technologies – HIGH-VOLTAGE SWITCHING APPLICATIONS

2SC4027
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V_CBO
180
V
Collector to Emitter Voltage
V_CEO
160
V
Emitter to Base Voltage
V_EBO
6
V
Collector Current
I_C
1.5
A
Collector Current (Pulse)
I_CP
2.5
A
Collector Dissipation
Ta=25°C
Pc
T_C=25°C
1
W
15
W
Junction Temperature
T_J
150
°C
Storage Temperature
T_STG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
SYMBOL
TEST CONDITIONS
BV_CBO I_C=10A, I_E=0
BV_CEO I_C =1mA, R_BE=∞
BV_EBO I_E=10μA, I_C =0
V_CE(SAT) I_C =500mA, I_B=50mA
V_BE(SAT) I_C =500mA, I_B=50mA
I_CBO V_CB=120V, I_E=0
I_EBO V_EB=4V, I I_C =0
h_FE1 VCE=5V, IC =100mA
h_FE2 V_CE=5V, I_C =10mA
f_T
V_CE=10V, I_C =50mA
C_ob V_CB=-10V, f=1MHz
T_ON See specified Test Circuit
T_STG
t_F
„ CLASSIFICATION OF h_FE1
RANK
RANGE
R
100~200
S
140~280
MIN TYP MAX UNIT
180
V
160
V
6
V
0.13 0.45 V
0.85 1.2 V
1.0 μA
1.0 μA
100
400
80
120
MHz
12
pF
60
μs
1.2
μs
80
μs
T
200~400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R209-018.B