2SB1198_11 Datasheet, PDF (2/4 Pages) Unisonic Technologies – LOW FREQUENCY PNP TRANSISTOR

2SB1198
PNP EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING ( Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-80
V
Collector-Emitter Voltage
V_CEO
-80
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-0.5
A
Collector Power Dissipation
P_C
0.2
W
Junction Temperature
T_J
150
℃
Storage Temperature
T_STG
-40 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃.
„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Base Breakdown Voltage BV_CBO I_C= -50μA
-80
Collector Emitter Breakdown Voltage BV_CEO I_C= -2mA
-80
Emitter Base Breakdown Voltage
BV_EBO I_E= -50μA
-5
Collector Cut-Off Current
I_CBO V_CB= -50V
Emitter Cut-Off Current
I_EBO V_EB= -4V
Collector-Emitter Saturation Voltage V_CE(sat) I_C/I_B= -0.5A/-50mA
DC Current Transfer Ratio
h_FE V_CE= -3V, I_C= -0.1A
120
Transition Frequency
f_T V_CE=-10V, I_E= 50 mA, f=100MHz
Output Capacitance
C_ob V_CB= -10V, I_E= 0 A, f=1MHz
TYP MAX
-0.5
-0.5
-0.2 -0.5
390
180
11
UNIT
V
V
V
μA
μA
V
MHz
pF
„ CLASSIFICATION OF h_FE
RANK
RANGE
MARKING
Q
120-270
AKQ
R
180-390
AKR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-040,B