2SA1700_12 Datasheet, PDF (2/3 Pages) Unisonic Technologies – HIGH VOLTAGE DRIVER APPLICATION

2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATING ( T_A=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-400
V
Collector-Emitter Voltage
V_CEO
-400
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-200
mA
Collector Current (PULSE)
I_CP
-400
mA
Power Dissipation
Junction Temperature
Storage Temperature
1
W
P_D
10 (T_C=25℃)
W
T_J
150
℃
T_STG
-55 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Reverse Transfer Capacitance
Gain-Bandwidth Product
Turn-on Time
Turn-off Time
SYMBOL
TEST CONDITIONS
BV_CBO I_C= -10μA, I_E=0
BV_CEO I_C= -1mA, I_B=0, R_BE=∞
BV_EBO I_E= -10μA, I_C=0
I_CBO V_CB= -300V, I_E=0
I_EBO V_EB= -4V, I_C=0
h_FE V_CE= -10V, I_C= -50mA
V_CE(SAT) I_C= -50mA, I_B= -5mA
V_BE(SAT) I_C= -50mA, I_B= -5mA
C_OB V_CB= -30V, f=1MHz
C_RE V_CB= -30V, f=1MHz
f_T V_CE= -30V, I_C= -10mA
t_ON See test circuit
t_OFF See test circuit
MIN TYP MAX UNIT
-400
V
-400
V
-5
V
-0.1 μA
-0.1 μA
60
200
-0.8
V
-1.0
V
5
pF
4
pF
70
MHz
0.25
μs
5
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R213-011.B