2N7002ZDW_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2N7002ZDW
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_A = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
60
V
Gate-Source Voltage
V_GSS
±20
V
Drain Current
Continuous
Pulse(Note 2)
I_D
300
800
mA
Power Dissipation
Derating above T_A=25°C
P_D
200
mW
1.6
mW/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS V_GS=0V, I_D=10µA
60
Drain-Source Leakage Current
I_DSS
V_DS=60V, V_GS=0V
Gate-Source Leakage Current
I_GSS
V_DS=0V, V_GS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
V_GS(TH) V_DS=10V, I_D=1mA
1.0 1.85
R_DS(ON)
V_GS=10V, I_D=0.3A, T_J=125°C
V_GS=5V, I_D=0.05A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
25
C_OSS V_DS=25V, V_GS=0V, f=1.0MHz
10
C_RSS
3.0
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-OFF Delay Time
t_D(ON)
t_D(OFF)
I_D=0.2 A, V_DD=30V, V_GS=10V,
R_L=150Ω, R_G=10Ω
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=300mA (Note )
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
12
20
0.88
Maximum Continuous Drain-Source Diode
Forward Current
Is
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%
MAX UNIT
V
1.0 µA
±10 µA
2.5 V
13.5
7.5
Ω
50 pF
25 pF
5.0 pF
20 ns
30 ns
1.5 V
0.8 A
300 mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-540.D