2N5551_10 Datasheet, PDF (2/4 Pages) Unisonic Technologies – HIGH VOLTAGE SWITCHING TRANSISTOR

2N5551
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
180
V
Collector-Emitter Voltage
V_CEO
160
V
Emitter-Base Voltage
V_EBO
6
V
Collector Dissipation
Collector Dissipation
TO-92
625
mW
SOT-89
P_C
500
mW
Collector Current
I_C
600
mA
Junction Temperature
T_J
+150
℃
Storage Temperature
T_STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage BV_CBO I_C=100μA, I_E=0
180
Collector-Emitter Breakdown Voltage BV_CEO I_C=1mA, I_B=0
160
Emitter-Base Breakdown Voltage
BV_EBO I_E=10μA, I_C=0
6
Collector Cut-off Current
I_CBO V_CB=120V, I_E=0
Emitter Cut-off Current
I_EBO V_BE=4V,I_C=0
DC Current Gain(Note)
h_FE1 V_CE=5V, I_C=1mA
80
h_FE2 V_CE=5V, I_C=10mA
80
h_FE3 V_CE=5V, I_C=50mA
80
Collector-Emitter Saturation Voltage
V_CE(SAT)
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
Base-Emitter Saturation Voltage
V_BE(SAT)
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
Current Gain Bandwidth Product
f_T V_CE=10V, I_C=10mA, f=100MHz 100
Output Capacitance
C_ob V_CB=10V, I_E=0 f=1MHz
Noise Figure
NF
I_C=0.25mA, V_CE=5V
R_S=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty cycle<2%
„ CLASSIFICATION OF h_FE
RANK
RANGE
A
80-170
B
150-240
TYP MAX UNIT
V
V
V
50
nA
50
nA
160
400
0.15
V
0.2
1
1
V
300 MHz
6.0
pF
8
dB
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-002.C