2N5401_15 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

2N5401
PNP SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (T_A=25C , unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
-160
V
V_CEO
-150
V
Emitter-Base Voltage
Collector Current
V_EBO
I_C
-5
V
-600
mA
Collector Dissipation
SOT-89
TO-92
P_C
500
mW
625
mW
Junction Temperature
Storage Temperature
T_J
T_STG
+150
C
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (T_A=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
SYMBOL
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(SAT)
Base-Emitter Saturation Voltage
V_BE(SAT)
Current Gain Bandwidth Product
f_T
Output Capacitance
C_OB
Noise Figure
NF
Note: Pulse test: P_W < 300μs, Duty Cycle < 2%.
 CLASSIFICATION OF h_FE2
TEST CONDITIONS
I_C = -100μA, I_E = 0
I_C = -1mA, I_B = 0
I_E = -10μA, I_C = 0
V_CB = -120V, I_E = 0
V_EB = -3V, I_C = 0
V_CE = -5V, I_C = -1mA
V_CE = -5V, I_C = -10mA
V_CE = -5V, I_C = -50mA
I_C = -10mA, I_B = -1mA
I_C = -50mA, I_B = -5mA
I_C = -10mA, I_B = -1mA
I_C = -50mA, I_B = -5mA
V_CE = -10V, I_C = -10mA
f = 100MHz
V_CB = -10V, I_E = 0, f = 1MHz
I_C = -0.25mA, V_CE = -5V
R_S = 1k, f = 10Hz ~ 15.7kHz
MIN TYP MAX UNIT
-160
V
-150
V
-5
V
-50 nA
-50 nA
80
80
400
80
-0.2 V
-0.5 V
-1
V
-1
V
100
400 MHz
6.0 pF
8 dB
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-001.H