2N5088 Datasheet, PDF (2/6 Pages) ON Semiconductor – Amplifier Transistor(NPN Silicon)

UTC 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(note)
2N5088
V(BR)CEO I_C=1.0mA, I_B=0
2N5089
Collector-Base Breakdown Voltage
2N5088
V(BR)CBO I_C=100µA, I_E=0
2N5089
Collector Cut-Off Current
ICBO
2N5088
2N5089
V_CB=20V, I_E=0
V_CB=15V, I_E=0
Emitter Cutoff Current
IEBO
V_EB=3.0V, I_C=0
V_EB=4.5V, I_C=0
ON CHARACTERISTICS
DC Current Gain
hFE V_CE=5.0V, I_C=100µA 2N5088
2N5089
V_CE=5.0V, I_C=1.0mA
2N5088
2N5089
V_CE=5.0V, I_C=10mA
(NOTE)
2N5088
2N5089
Collector-Emitter Saturation Voltage
VCE(sat) I_C=10mA, I_B=1.0mA
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
VBE(on) I_C=10mA, V_CE=5.0V
Current Gain-Bandwidth Product
fT
VCE=5.0mA, Ic=500µA, f=20MHz
Collector-Base Capacitance
Emitter-Base Capacitance
Ccb VCB=5.0V, I_E=0, f=100kHz
Ceb VEB=0.5V, Ic=0, f=100kHz
Small-Signal Current Gain
2N5088
h_FE VCE=5.0V, Ic=1.0mA, f=1.0kHz
2N5089
Noise Figure
NF VCE=5.0V, Ic=100µA, Rs=10kΩ,
2N5088
f=10KHz to 15.7kHz
2N5089
Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%.
MIN MAX UNIT
30
V
25
V
35
V
30
V
50
nA
50
nA
50
nA
100 nA
300 900
400 1200
350
450
300
400
0.5
V
0.8
V
50
MHz
4
pF
10
pF
350 1400
450 1800
3.0 dB
2.0 dB
UTC UNISONIC TECHNOLOGIES CO., LTD. ²
QW-R201-040,A