2N4403 Datasheet, PDF (2/5 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

2N4403
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25Â¥, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
40
V
Collector-Emitter Voltage
V_CEO
40
V
Emitter-Base Voltage
V_EBO
5
V
Collector Current-Continuous
I_C
600
mA
Total Device Dissipation
Derate above 25Â¥
625
mW
P_C
5.0
mW/Ċ
Junction Temperature
Storage Temperature
T_J
150
Ċ
T_STG
-55 ~ +150
Ċ
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (Ta=25Â¥, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance,
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
200
83.3
ELECTRICAL CHARACTERISTICS (Ta=25Â¥, unless otherwise specified)
UNIT
Â¥/W
Â¥/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (Note)
BV_CEO I_C=1mA, I_B=0
Collector-Base Breakdown Voltage BV_CBO Ic=0.1mA,IE=0
Emitter-Base Breakdown Voltage
BV_EBO I_E=0.1mA, I_C=0
Collector Cut-off Current
I_CEX V_CE=35V, V_EB=0.4V
Base Cut-off Current
ON CHARACTERISTICS*
I_BEX V_CE=35V, V_BE=0.4V
h_FE1 V_CE=1V,I_C=0.1mA
DC Current Gain
h_FE2
h_FE3
V_CE=1V,I_C=1mA
V_CE=1V,I_C=10mA
h_FE4 V_CE=2V, I_C=150mA (Note)
h_FE5 V_CE=2V, I_C=500mA (Note)
Collector-Emitter Saturation
V_CE(SAT1) I_C=150mA, I_B=15mA
Voltage
V_CE(SAT2) I_C=500mA, I_B=50mA
Base-Emitter Saturation Voltage
V_BE(SAT1) I_C=150mA, I_B=15mA(Note)
V_BE(SAT2) I_C=500mA, I_B=50mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f_T
V_CE=10V, I_C=20mA, f=100MHz
Collector-Base Capacitance
Ccb V_CB=10V, I_E=0, f=140kHz
Emitter-Base Capacitance
Ceb V_BE=0.5V, I_C=0, f=140kHz
Input Impedance
h_IE
V_CE=10V, I_C=1mA, f=1kHz
Voltage Feedback Ratio
h_RE V_CE=10V, I_C=1mA, f=1kHz
Small-Signal Current Gain
h_FE V_CE=10V, I_C=1mA, f=1kHz
Output Admittance
SWITCHING CHARACTERISTICS
h_OE V_CE=10V, I_C=1mA, f=1kHz
Delay Time
Rise Time
t_D
t_R
V_CC=30V, I_C=150mA I_B1=15mA
Storage Time
t_S
V_CC=30V, I_C=150mA
Fall Time
t_F
I_B1= I_B2=15mA
Note Pulse test: Pulse Width≤300µs, Duty Cycle≤2%
MIN
40
40
5
30
60
100
100
20
0.75
200
1.5
0.1
60
1.0
TYP
MAX UNIT
V
V
V
0.1
µA
0.1
µA
300
0.4
V
0.75
V
0.95
V
1.3
V
MHz
8.5
pF
30
pF
15
kΩ
8
×10^-4
500
100 µmbos
15
ns
20
ns
225
ns
30
ns
UNISONIC TECHNOLOGIES CO., LTD
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