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| 2N4401_09 Datasheet, PDF (2/6 Pages) Micro Commercial Components – NPN General Purpose Amplifier | |||
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2N4401
NPN SILICON TRANSISTOR
 ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
VCBO
60
V
VCEO
40
V
VEBO
6
V
IC
600
mA
Power Dissipation
Derate above 25°C
625
mW
PD
5.0
mW/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Notes: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA (Ta=25°C, unless otherwise specified)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Junction to Ambient
Junction to Case
θJA
200
°C/W
θJC
83.3
°C/W
 ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=0.1mA, IE=0
60
V
Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA, IB=0
40
V
Emitter-Base Breakdown Voltage
BVEBO IE=0.1mA, IC=0
6
V
Collector Cut-off Current
ICEX VCE=35V, VEB=0.4V
µA
Base Cut-off Current
IBL VCE=35V, VEB=0.4V
µA
ON CHARACTERISTICS (note)
DC Current Gain
hFE1 VCE=1V, IC=0.1mA
hFE2 VCE=1V, IC=1mA
hFE3 VCE=1V, IC=10mA
hFE4 VCE=1V, IC=150mA
20
40
80
100
300
hFE5 VCE=2V, IC=500mA
40
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS1
VCE(SAT1) IC=150mA, IB=15mA
VCE(SAT2) IC=500mA, IB=50mA
VBE(SAT1) IC=150mA, IB=15mA
VBE(SAT2) IC=500mA, IB=50mA
0.4 V
0.75 V
0.75
0.95 V
1.2 V
Current Gain Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
SWITCHING CHARACTERISTICS
fT VCE=10V, IC=20mA, f=100MHz 250
Ccb VCB=5V, IE=0, f=140kHz
Ceb VBE=0.5V, IC=0, f=140kHz
hie VCE=10V, IC=1mA, f=1kHz
1
hre VCE=10V, IC=1mA, f=1kHz
0.1
hfe VCE=10V, IC=1mA, f=1kHz
40
hoe VCE=10V, IC=1mA, f=1kHz
1
MHz
6.5 pF
30 pF
15 kâ¦
8 Ã10-4
500
30 µmhos
Delay Time
tD
Rise Time
tR
Storage Time
tS
Fall Time
tF
Note: Pulse test: PulseWidthâ¤300μs, Duty Cycleâ¤2%
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, VEB=2V
IC=150mA IB1=15mA
VCC=30V, IC=150mA
IB1= IB2=15mA
15 ns
20 ns
225 ns
30 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R201-052.C
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