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| 2N40_15 Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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2N40
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
Pulsed
IDM
2
A
7
A
Avalanche Current
IAR
2.5
A
Single Pulsed Avalanche Energy
EAS
100
mJ
Power Dissipation
PD
25
Linear Derating Factor
â³PD/â³Tmb
0.2
W
W/°C
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
5
 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature
Coefficient
â³BVDSS/â³TJ VDS=VGS, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=400V, VGS=0V
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=1.25A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
QG(TOT)
QGS
VGS=10V, VDS=320V, ID=2.5A
Gate to Drain Charge
QGD
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
tD(ON)
tR
tD(OFF)
VDD=200V, ID=2.5A, RG=24â¦,
RD=78 â¦
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
IS
ISM
TC=25°C
Drain-Source Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
QRR
IS=2.5A, VGS=0V, dI/dt=100A/µs
MIN TYP MAX UNIT
400
V
0.45
V/°C
1 25 µA
+10 +200 nA
-10 -200 nA
2.0
4.0 V
3.0 3.4 â¦
240
pF
44
pF
26
pF
20 25 nC
2 3 nC
8 12 nC
10
ns
25
ns
46
ns
25
ns
2.5 A
10 A
1.2 V
200
ns
2.0
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-524.b
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