2N3906_12 Datasheet, PDF (2/3 Pages) Unisonic Technologies – GENERAL PURPOSE APPLIATION

2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
„ ABSOLUTE MAXIMUM RATING ( T_A=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
-40
V
Collector-Emitter Voltage
V_CEO
-40
V
Emitter-Base Voltage
V_EBO
-5
V
Collector Current
I_C
-200
mA
Base Current
I_B
-50
mA
Collector dissipation
P_C
625
mW
Junction Temperature
T_J
125
°С
Operating Temperature
T_OPR
-20 ~ +85
°С
Storage Temperature
T_STG
-40 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (T_A=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
I_CEX V_CE=-30V, V_EB=-3V
Base Cut-Off Current
I_BL V_CE=-30V, V_EB=-3V
Collector-Base Breakdown Voltage
V_CBO I_C=-10μA, I_E=0
-40
Collector-Emitter Breakdown Voltage V_CEO I_C=-1mA, I_B=0 (Note)
-40
Emitter-Base Breakdown Voltage
V_EBO I_E=-10μA, I_C=0
-6
h_FE1 V_CE=-1V, I_C=-0.1mA
60
h_FE2 V_CE=-1V, I_C=-1mA
80
DC Current Gain (Note)
h_FE3 V_CE=-1V, I_C=-10mA
100
h_FE4 V_CE=-1V, I_C=-50mA
60
h_FE5 V_CE=-1V, I_C=-100mA
30
Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-10mA, IB=-1mA
(Note)
V_CE(SAT)2 I_C=-50mA, I_B=-5mA
Base-Emitter Saturation Voltage
V_BE(SAT)1 I_C=-10mA, I_B=-1mA
V_BE(SAT)2 I_C=-50mA, I_B=-5mA
-0.65
Transition Voltage
f_T V_CE=-20V, I_C=-10mA, f=100MHz
250
Output Capacitance
C_OB V_CB=-5V, I_E=0, f=1MHz
Turn On Time
t_ON V_CC=-3V, V_BE=-0.5V, I_C=-10mA, I_B1=-1mA
Turn Off Time
t_OFF I_B1=1_B2=-1mA
Note: Pulse test: P_W<=300μs, Duty Cycle<=2%
TYP
MAX UNIT
-50 nA
-50 nA
V
V
V
300
-0.25
-0.4
-0.85
-0.95
4.5
70
300
V
V
MHz
pF
ns
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-028, C