2N3904 Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN switching transistor

2N3904
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25Â¥)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V_CBO
60
V
Collector-Emitter Voltage
V_CEO
40
V
Emitter-Base Voltage
V_EBO
6
V
Collector Current
I_C
200
mA
Collector Dissipation
Junction Temperature
Operating and Storage Temperature
P_C
625
mW
T_J
150
Â¥
T_STG
-55 ~ +150
Â¥
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25Â¥, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV_CBO I_C=10µA, I_E=0
Collector-Emitter Breakdown Voltage (note) BV_CEO I_C=1mA,I_B=0
Emitter-Base Breakdown Voltage
BV_EBO I_E=10µA, I_C=0
Collector-Emitter Saturation Voltage (note) ^{VCE(SAT)1 IC=10mA, IB=1mA}
V_CE(SAT)2 I_C=50mA, I_B=5mA
Base-Emitter Saturation Voltage (note)
V_BE(SAT)1 I_C=10mA, I_B=1mA
V_BE(SAT)2 I_C=50mA, I_B=5mA
Collector Cut-off Current
I_CBO V_CE=30V, V_EB=3V
Base Cut-off Current
I_BL V_CE=30V, V_EB=3V
h_FE1 V_CE=1V, I_C=0.1mA
h_FE2 V_CE=1V, I_C=1mA
DC Current Gain (note)
h_FE3 V_CE=1V, I_C=10mA
h_FE4 V_CE=1V, I_C=50mA
h_FE5 V_CE=1V, I_C=100mA
Current Gain Bandwidth Product
f_T V_CE=20V, I_C=10mA, f=100MHz
Output Capacitance
C_ob V_CB=5V, I_E=0, f=1MHz
Turn on Time
t_ON
V_CC=3V,V_BE=0.5V,I_C=10mA,
I_B1=1mA
Turn off Time
t_OFF I_B1=1_B2=1mA
Note: Pulse test: Pulse Width⛄300µs, Duty Cycle⛄2%
MIN TYP MAX UNIT
60
V
40
V
6
V
0.2 _V
0.3
0.65
0.85
V
0.95
50 nA
50 nA
40
70
100
300
60
30
300
MHz
4 pF
70 ns
250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-027,B