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2N3772_15 Datasheet, PDF (2/3 Pages) Unisonic Technologies – SILICON NPN TRANSISTORS
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2N3772
SILICON NPN TRANSISTOR
„ ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Collector-Emitter Voltage
VCEV
80
V
Collector Current
IC
30
A
Collector Peak Current (Note 1)
ICM
30
A
Base Current
IB
5
A
Base Peak Current (Note 1)
IBM
15
A
Power Dissipation (TA=25℃)
PD
150
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note 1. Pulse Test: PW<=300μs, Duty Cycle<=2%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
VCEX(SUS) IC=0.2A,VBE(OFF)=1.5V,RBE=100Ω
Collector-Emitter Sustaining Voltage VCER(SUS) IC=0.2A, RBE=100Ω
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=0.2A, IB=0
Collector Cut-off Current
ICEO VCE=50V,IB=0
Collector Cut-off Current
ICEX
VCE=100V, VBE(OFF)=1.5V.
VCE=30V, VBE(OFF)=1.5V, TA=150℃
Collector Cut-off Current
ICBO VCE=50V, IE=0
Emitter Cut-off Current
IEBO VBE=7V, IC=0
ON CHARACTERISTICS
DC Current Gain (Note)
hFE
IC=10A,VCE=4V
IC=20A, VCE=4V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10A, IB=1.5A
IC=20A, IB=4A
Base-Emitter On Voltage
VBE(ON) IC=10A, VCE=4V
SECOND BREAKDOWN
Second Breakdown Collector with Base
Forward Biased
IS/b VCE=60V, T=1.0s, Non-repetitive
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
fT
Small-Signal Current Gain
hFE
Note: Pulse Test: PW<=300μs, Duty Cycle<=2%
IC=1A, VCE=4V, f=50kHz
IC=1A, VCE=4V, f=1kHz
MIN TYP MAX UNIT
80
V
70
V
60
V
10 mA
5
mA
10
5 mA
5 mA
15
60
5
1.4 V
4.0
2.2 V
2.5
A
0.2
MHz
40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R205-002,Ba
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