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| 20N65_15 Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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22N65
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
650
V
VGSS
±30
V
Avalanche Current
Continuous Drain Current
IAR
22
A
ID
22
A
Pulsed Drain Current (Note 1)
Avalanche Energy
Single Pulsed
Repetitive
Peak Diode Recovery dv/dt (Note 2)
IDM
EAS
EAR
dv/dt
88
A
380
mJ
37
mJ
18
V/ns
Power Dissipation
Junction Temperature
PD
370
W
TJ
150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. ISD ⤠22A, di/dt â¤540 A/μs, VDD ⤠V(BR)DSS, TJ â¤150°C.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ï® THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
Junction to Case
θJA
40
°C /W
θJC
0.30
°C /W
ï® ELECTRICAL CHARACTERISTICS(TJ=25°C, L=1.5mH,RG=25â¦,IAS =22A,Unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=650V, VGS=0V
Gate- Source Leakage Current
IGSS
VDS=0V, VGS=±30V
Breakdown Voltage Temperature Coefficient âBVDSS/âTJ ID=1mA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON) VGS=10V, ID=13A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=300V, ID=22A, RG=6.2â¦,
VGS=10V (Note 2)
Turn-OFF Fall-Time
tF
Total Gate Charge
Gate Source Charge
Gate Drain Charge
QG
QGS
QGD
VDS=480V, VGS=10V, ID=22A
(Note 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, IS=22A
Continuous Source Current (Body Diode)
IS
(Note 1)
Pulsed Source Current (Body Diode)
ISM
Reverse Recovery Time
tRR
IS=22A,
Reverse Recovery Charge
QRR di/dt=100A/μs (Note 2)
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse Width ⤠300 s, Duty Cycle ⤠2%.
MIN TYP MAX UNIT
650
V
50 µA
±100 nA
0.30
V/°C
2.0
4.0 V
0.3 0.35 â¦
3200
pF
350
pF
36
pF
100
ns
250
ns
650
ns
550
ns
150 nC
45 nC
76 nC
1.5 V
22 A
88 A
590 890 ns
7.2 11 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-466.C
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