20N65 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 20A, 650V N-CHANNEL POWER MOSFET

20N65
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
650
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current (T_C=25°C)
Continuous
Pulsed
I_D
I_DM
20
A
80
A
Avalanche Energy
Single Pulsed(Note 2)
E_AS
1200
mJ
Power Dissipation (T_C=25°C)
P_D
300
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. V_DD=50V, Starting T_J=25°С, Peak I_AS=20A, L=6mH
„ THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θ_JC
RATINGS
0.42
„ ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
UNIT
°С/ W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BV_DSS I_D=250µA, V_GS=0V
I_DSS V_DS=650V, V_GS=0V
Forward
Gate- Source Leakage Current
Reverse
I_GSS
V_GS=+30V, V_DS=0V
V_GS=-30V, V_DS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH) V_DS=V_GS, I_D=250µA
Static Drain-Source On-State Resistance
R_DS(ON)
V_GS=10V, I_D=10A, Pulse test,
t≤300µs, duty cycle d≤2%
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
C_ISS
C_OSS
V_GS=0V, V_DS=25V, f=1MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
C_RSS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Q_G
Q_GS
Q_GD
t_D(ON)
V_GS=10V, V_DS=520V, I_D=10A
(Note 1, 2)
Rise Time
Turn-OFF Delay Time
t_R
V_GS=10V, V_DS=325V, I_D=10A,
t_D(OFF) RG=2Ω (Note 1, 2)
Fall-Time
t_F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
I_S
V_GS=0V
Maximum Body-Diode Pulsed Current
I_SM Repetitive
Drain-Source Diode Forward Voltage
V_SD
I_F=I_S, V_GS=0V, Pulse test,
t≤300µs, duty cycle d≤2%
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
650
V
10 µA
+100 nA
-100 nA
2.0
4.0 V
0.32 0.45 Ω
4500
pF
420
pF
140
pF
150 170 nC
29 40 nC
60 85 nC
20 40 ns
43 60 ns
70 90 ns
40 60 ns
20 A
80 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-731.a