20N60 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 20A, 600V N-CHANNEL POWER MOSFET

20N60
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C =25°С, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Avalanche Energy
Single Pulsed(Note 2)
Power Dissipation
TO-3P
TO-247
SYMBOL
V_DSS
V_GSS
I_D
I_DM
E_AS
P_D
RATINGS
600
±20
20
80
1200
300
370
UNIT
V
V
A
A
mJ
W
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. V_DD=50V, Starting T_J=25°С, Peak I_AS=20A, L=6mH
„ THERMAL DATA
PARAMETER
Junction to Case
TO-3P
TO-247
SYMBOL
θ_JC
RATINGS
0.42
0.34
„ ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)
UNIT
°С/ W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS I_D=250µA, V_GS=0V
600
V
Drain-Source Leakage Current
I_DSS V_DS=600V, V_GS=0V
10 µA
Forward
Gate- Source Leakage Current
Reverse
I_GSS
V_GS=+20V, V_DS=0V
V_GS=-20V, V_DS=0V
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH) V_DS=V_GS, I_D=250µA
2
4.0 V
Static Drain-Source On-State Resistance
R_DS(ON)
V_GS=10V, I_D=10A, Pulse test,
t≤300µs, duty cycle d≤2%
0.32 0.45 Ω
DYNAMIC PARAMETERS
Input Capacitance
C_ISS
4500
pF
Output Capacitance
C_OSS V_GS=0V, V_DS=25V, f=1MHz
420
pF
Reverse Transfer Capacitance
C_RSS
140
pF
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q_G
Q_GS
V_GS=10V, V_DS=300V, I_D=10A
(Note 1, 2)
Q_GD
150 170 nC
29 40 nC
60 85 nC
Turn-ON Delay Time
t_D(ON)
20 40 ns
Rise Time
Turn-OFF Delay Time
t_R V_GS=10V, V_DS=300V, I_D=10A,R_G=2Ω,
t_D(OFF) (Note 1, 2)
43 60 ns
70 90 ns
Fall-Time
t_F
40 60 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
Current
I_S
V_GS=0V
20 A
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
I_SM Repetitive
V_SD
I_F=I_S, V_GS=0V, Pulse test,
t≤300µs, duty cycle d≤2%
80 A
1.5 V
Body Diode Reverse Recovery Time
t_rr I_F=I_S,V_R=100V,-di/dt=100A/µs(Note 1)
600
ns
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-587.E