20N40K-MT Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

20N40K-MT
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous T_C=25°C
Pulsed (Note 2)
Avalanche Current (Note 2)
Avalanche Energy Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
SYMBOL
V_DSS
V_GSS
I_D
I_DM
I_AR
E_AS
dv/dt
RATINGS
400
±30
20
80
20
1000
4.5
UNIT
V
V
A
A
A
mJ
V/ns
Power Dissipation (T_C=25°C)
Derate above 25°C
P_D
45
W
0.35
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5.01mH, I_AS = 20A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C
4. I_SD ≤ 20A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
 THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
 ELECTRICAL CHARACTERISTICS
RATINGS
62.5
2.8
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
I_D=250µA, V_GS=0V
Breakdown Voltage Temperature Coefficient △BV_DSS/△T_J Reference to 25°C, I_D=250µA
Drain-Source Leakage Current
I_DSS
V_DS=400V, V_GS=0V
Gate- Source Leakage Current
Forward
Reverse
I_GSS
V_GS=+30V, V_DS=0V
V_GS=-30V, V_DS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
V_GS(TH)
R_DS(ON)
V_DS=V_GS, I_D=250µA
V_GS=10V, I_D=10A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ISS
C_OSS
C_RSS
V_GS=0V, V_DS=25V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain Charge
t_D(ON)
t_R
t_D(OFF)
t_F
Q_G(TOT)
Q_GS
Q_GD
V_DS=30V, I_D=0.5A, R_G=25Ω
(Note 1, 2)
V_GS=10V, V_DS=50V, I_D=1.3A
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I_S
Maximum Body-Diode Pulsed Current
I_SM
Drain-Source Diode Forward Voltage
V_SD
I_SD=23A, V_GS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially Independent of Operating Temperature Typical Characteristics
MIN TYP MAX UNIT
400
V
0.5
V/°C
10 µA
+100 nA
-100 nA
2.0
4.0 V
0.15 0.22 Ω
1170
pF
300
pF
11.9
pF
110
ns
190
ns
372
ns
200
ns
57
nC
15
nC
16
nC
20 A
80 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-B17.c