1N4004G Datasheet, PDF (2/4 Pages) Unisonic Technologies – GLASS PASSIVATED SILICON RECTIFIER

1N4004G
DIODE
„ ABSOLUTE MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
Working Peak Reverse Voltage
V_RWM
400
V
Repetitive Peak Reverse Voltage
V_RRM
400
V
Maximum RMS Reverse Voltage
V_RMS
280
V
DC Blocking Voltage
V_R
400
V
Average Rectified Output Current (T_A=75°C)
I_O
1.0
A
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
I_FSM
30
A
Junction Temperature
T_J
-55~+150
°C
Storage Temperature
T_STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA
PARAMETER
Junction to Ambient (Note 2)
SYMBOL
θ_JA
„ ELECTRICAL CHARACTERISTICS
RATINGS
50
UNIT
°C/W
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL TEST CONDITIONS MIN TYP
Instantaneous Forward Voltage
V_FM
I_F=1.0A
DC Reverse Current at Rated DC Blocking
Voltage
I_RM
T_A=25°C
T_A=100°C
Junction Capacitance (Note 1)
C_J
15
Notes: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted.
MAX
1.1
5.0
50
UNIT
V
μA
μA
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-253.B