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| 17N40K-MT Datasheet, PDF (2/5 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET | |||
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17N40K-MT
Preliminary
Power MOSFET
ï® ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous TC=25°C
Pulsed (Note 2)
ID
IDM
17
68
A
A
Avalanche Energy Single Pulsed (Note 3)
EAS
811
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC=25°C)
Derate above 25°C
PD
39
W
3.2
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5.61mH, IAS = 17A, VDD = 50V, RG = 25â¦, Starting TJ = 25°C
4. ISD ⤠17A, di/dt ⤠200A/µs, VDD ⤠BVDSS, Starting TJ = 25°C
ï® THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
ï® ELECTRICAL CHARACTERISTICS
RATINGS
62.5
3.2
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient â³BVDSS/â³TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
IDSS
VDS=400V, VGS=0V
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDS=30V, ID=0.5A, RG=25â¦
(Note 1, 2)
Fall-Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain Charge
tF
QG(TOT)
QGS
QGD
VGS=10V, VDS=50V, ID=1.3A
(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
ISM
VSD
ISD=17A, VGS=0V
Notes: 1. Pulse Test: Pulse width ⤠300µs, Duty cycle ⤠2%
2. Essentially Independent of Operating Temperature Typical Characteristics
MIN TYP MAX UNIT
400
V
0.5
V/°C
10 µA
+100 nA
-100 nA
2.0
4.0 V
0.18 0.24 â¦
980
pF
240
pF
11.4
pF
82
ns
136
ns
270
ns
152
ns
47
nC
12.5
nC
13
nC
17 A
68 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-B15.d
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