15N40_15 Datasheet, PDF (2/6 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

15N40
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified.) (Note 5)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
V_DSS
400
V
Gate-Source Voltage
V_GSS
±30
V
Drain Current
Continuous
T_C=25°C
T_C=100°C
I_D
15
A
9
A
Pulsed (Note 2)
I_DM
60
A
Avalanche Current (Note 2)
I_AR
15
A
Single Pulsed (Note 3)
Avalanche Energy
E_AS
Repetitive (Note 2)
E_AR
731
mJ
17
mJ
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation (T_C=25°C)
Derate above 25°C
dv/dt
P_D
15
V/ns
170
W
1.45
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating; Pulse width limited by maximum junction temperature.
3. L=6.5mH, I_AS=15A. V_DD=50V, R_G=25Ω, Starting T_J=25°C
4. ISD≤15A, di/dt≤200A/µs, VDD≤BVDSS, Starting TJ=25°C
5. Drain current limited by maximum junction temperature
„ THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
0.7
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-633.b