12N06Z Datasheet, PDF (2/3 Pages) Unisonic Technologies – 12A, 60V N-CHANNEL POWER MOSFET

12N06Z
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
60
V
Gate-Source Voltage
V_GSS
±20
V
Drain Current
Continuous T_C = 25°C
I_D
Pulsed
I_DM
12
A
48
A
Total Dissipation at T_C = 25°C
P_TOT
30
W
Peak Diode Recovery dv/dt
dv/dt
15
V/ns
Avalanche Energy
E_AS
140
mJ
Junction Temperature
T_J
-55~+175
°C
Storage Temperature Range
T_STG
-55~+175
°C
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient Max
Junction to Case Max
SYMBOL
θ_JA
θ_JC
RATINGS
100
5
„ ELECTRICAL CHARACTERISTICS (T_CASE=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS ^ID^=250μA
Drain-Source Leakage Current
Gate- Source Leakage Current Forward
I_DSS
V_DS=60V
I_GSS
V_GS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
V_GS(TH) V_DS=V_GS, I_D=250µA
Static Drain-Source On-State Resistance
R_DS(ON) V_DS=10V, I_D=6A
On State Drain Current
I_D(ON)
V_GS=10V, V_DS=1V
DYNAMIC PARAMETERS
Input Capacitance
C_ISS
Output Capacitance
C_OSS
V_DS=25V, f=1MHz, V_GS=0V
Reverse Transfer Capacitance
C_RSS
SWITCHING PARAMETERS
Total Gate Charge
Q_G
Gate to Source Charge
Q_GS
V_GS=5V, I_D=12A, V_DD=48V
Gate to Drain Charge
Q_GD
Turn-ON Delay Time
t_D(ON)
Rise Time
Turn-OFF Delay Time
t_R
t_D(OFF)
V_DD=30V, I_D=6A, R_G=4.7Ω,
V_GS=0~10V
Fall-Time
t_F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
I_S
I_SM
V_SD
I_S=12A
MIN TYP MAX UNIT
60
V
1 µA
±10 _µA
1
3V
0.08 0.1 Ω
5
30 A
350
pF
75
pF
30
pF
7.5 10 nC
2.5
nC
3.0
nC
10
ns
35
ns
20
ns
13
ns
12 A
48 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-767.A