10N70T Datasheet, PDF (2/6 Pages) Unisonic Technologies – 10A, 700V N-CHANNEL POWER MOSFET

10N70T
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V_DSS
700
V
Gate-Source Voltage
V_GSS
±30
V
Avalanche Current (Note 2)
I_AR
10
A
Drain Current
Continuous
I_D
Pulsed (Note 2)
I_DM
10
A
40
A
Avalanche Energy
Single Pulsed (Note 3)
E_AS
Repetitive (Note 2)
E_AR
700
mJ
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P_D
50
W
Junction Temperature
T_J
+150
°C
Operating Temperature
T_OPR
-55 ~ +150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, I_AS = 10A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C
4. I_SD ≤ 9.5A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ_JA
θ_JC
RATING
62.5
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-877.a