10N30_15 Datasheet, PDF (2/4 Pages) Unisonic Technologies – N-CHANNEL POWER MOSFET

10N30
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (T_C=25°C)
Pulsed (Note 2)
Avalanche Current (Note 2)
Single Pulsed (Note 3)
Avalanche Energy _{Repetitive (Note 4)}
TO-220
Power Dissipation
TO-251/TO-252
TO-220
Derate above 25°C _{TO-251/TO-252}
V_DSS
V_GSS
I_D
I_DM
I_AR
E_AS
E_AR
P_D
300
V
±30
V
10
A
40
A
11
A
360
mJ
13.5
mJ
135
W
83
1.07
0.66
W/°C
Junction Temperature
T_J
+150
°C
Storage Temperature
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5.7mH, I_AS = 10.5A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C
4. I_SD ≤ 10.5A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-251/TO-252
SYMBOL
θ_JA
θ_JC
RATINGS
62.5
0.93
1.5
UNIT
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BV_DSS
I_DSS
I_GSS
I_D=250µA, V_GS=0V
V_DS=300V, V_GS=0V
V_GS=+30V, V_DS=0V
V_GS=-30V, V_DS=0V
V_GS(TH)
R_DS(ON)
V_DS=V_GS, I_D=250µA
V_GS=10V, I_D=10A
C_ISS
C_OSS
C_RSS
V_GS=0V, V_DS=25V, f=1.0MHz
MIN TYP MAX UNIT
300
V
1 µA
+100 nA
-100 nA
2.0
4.0 V
0.5 0.65 Ω
840 1090 pF
250 325 pF
80 110 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-738.b