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| 100N02 Datasheet, PDF (2/3 Pages) Unisonic Technologies – 100A, 15V N-CHANNEL POWER TRENCH MOSFET | |||
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100N02
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
15
V
Gate-Source Voltage
VGSS
±8
V
Drain Current
Continuous
ID
100
A
Pulsed
IDM
400
A
Avalanche Energy
Single Pulsed
EAS
12
mJ
Power Dissipation
PD
54
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
 ELECTRICAL CHARACTERISTICS
RATINGS
62.5
2.3
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=15V
Gate-Source Leakage Current
ON CHARACTERISTICS
Forward
Reverse
IGSS
VGS=+8V
VGS=-8V
Gate Threshold Voltage
VGS(TH) ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=4.5V, ID=55A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=20V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDD=12V, ID=0.3A,
IG=100µA
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=10V, ID=0.16A, RG=25â¦,
VGS=0~10V
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=55A
MIN TYP MAX UNIT
15
V
1 μA
±100 nA
±100 nA
0.5
1.2 V
12 mâ¦
3565
pF
1310
pF
395
pF
46 60 nC
6.9
nC
9.8
nC
9
ns
106
ns
53
ns
41
ns
1.3 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-860.a
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