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| 02N06Z Datasheet, PDF (2/4 Pages) Unisonic Technologies – 0.2A, 60V SILICON N-CHANNEL MOSFET | |||
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02N06Z
Preliminary
Power MOSFET
 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
Pulsed (Note 2)
IDM
200
mA
800
mA
Source Current
Continuous
IS
Pulsed (Note 2)
ISP
200
mA
800
mA
Power Dissipation (Note 3)
PD
200
mW
Channel Temperature
TCH
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pwâ¤10µs, Duty cycleâ¤1%.
3. Each terminal mounted on a recommended.
 ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 2)
Forward Transfer Admittance (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS (Note 3)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
Notes: 1. Pwâ¤300µs, Duty cycleâ¤1%.
2. Pulsed
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=10µA, VGS=0V
VDS=60V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
VGS(TH)
RDS(ON)
|YFS|
VDS=10V, ID=1mA
VGS=10V, ID=200mA
VGS=4V, ID=200mA
VDS=10V, ID=200mA
CISS
COSS
CRSS
VGS=0V, VDS=10V, f=1.0MHz
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDD=30V, ID=200mA
VDD=30V, VGS=10V, ID=100mA,
RGS=10â¦, RL=300â¦
MIN TYP MAX UNIT
60
V
1 µA
+10 µA
-10 µA
1
2.5 V
1.7 2.4 â¦
2.8 4.0 â¦
100
mS
15
pF
8
pF
4
pF
2.2 4.4 nC
0.6
nC
0.3
nC
6
ns
5
ns
12
ns
95
ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
VER.a
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