English
Language : 

UTT6N10Z Datasheet, PDF (1/3 Pages) Unisonic Technologies – 100V, 6A N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UTT6N10Z
100V, 6A N-CHANNEL POWER
MOSFET
„ DESCRIPTION
The UTC UTT6N10Z is an N-channel enhancement mode Power
FET, it uses UTC’s advanced technology to provide customers a
minimum on-state resistance, high switching speed and ultra low
gate charge.
The UTC UTT6N10Z is usually used in DC-DC Conversion.
„ FEATURES
* RDS(on) =80mΩ @VGS = 10 V,ID=6A
* High Switching Speed
* Low Crss (Typically 3.1pF)
* Low Gate Charge(Typically 4.3nC)
„ SYMBOL
2.Drain
Power MOSFET
1 SOT-223
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT6N10ZL-AA3-R
UTT6N10ZG-AA3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-921, A