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| UTT60N06_15 Datasheet, PDF (1/8 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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UNISONIC TECHNOLOGIES CO., LTD
UTT60N06
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
ï® DESCRIPTION
The UTC UTT60N06 is n-channel enhancement mode
power field effect transistors with stable off-state
characteristics, fast switching speed and low thermal
resistance. usually used at telecom and computer
applications.
ï® FEATURES
* RDS(ON) < 18m⦠@VGS = 10 V
* Fast switching capability
* Avalanche energy Specified
ï® SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ï® ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT60N06L-TA3-T
UTT60N06G-TA3-T
UTT60N06L-TN3-R
UTT60N06G-TN3-R
UTT60N06L-TQ2-T
UTT60N06G-TQ2-T
UTT60N06L-TQ2-R
UTT60N06G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-252
TO-263
TO-263
Pin Assignment
1
2
3
GDS
GDS
GDS
GDS
Packing
Tube
Tape Reel
Tube
Tape Reel
ï® MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-575.D
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