UTT10N10_15 Datasheet, PDF(1/3 Page) Unisonic Technologies – N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

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UTT10N10_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

UTT10N10

Preliminary

10A, 100V N-CHANNEL

MOSFET

ï® DESCRIPTION

The UTC UTT10N10 is an N-channel enhancement mode power

MOSFET using UTCâs advanced technology to provide the

customers with a minimum on-state resistance, high switching speed

and ultra low gate charge. It also can withstand high energy pulse in

the avalanche and commutation mode.

ï® FEATURES

* RDS(on) <180mâ¦ @VGS = 10 V

* High Switching Speed

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

UTT10N10L-TM3-T

UTT10N10G-TM3-T

UTT10N10L-TN3-R

UTT10N10G-TN3-R

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-251

TO-252

Pin Assignment

Packing

Tube

Tape Reel

ï® MARKING

www.unisonic.com.tw

1 of 3

QW-R502-714.d

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