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UTD452 Datasheet, PDF (1/4 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE | |||
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UNISONIC TECHNOLOGIES CO., LTD
UTD452
N-CHANNEL ENHANCEMENT
MODE
Power MOSFET
 DESCRIPTION
The UTD452 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
 FEATURES
* RDS(ON)< 8.5m⦠@VGS=10V
* RDS(ON)< 14m⦠@VGS=4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
 SYMBOL
2.Drain
Lead-free: UTD452L
Halogen-free: UTD452G
1.Gate
3.Source
 ORDERING INFORMATION
Normal
UTD452-TN3-R
UTD452-TN3-T
Ordering Number
Lead Free
UTD452L-TN3-R
UTD452L-TN3-T
Halogen Free
UTD452G-TN3-R
UTD452G-TN3-T
Package
TO-252
TO-252
Pin Assignment
1
2
3
GDS
GDS
Packing
Tape Reel
Tube
 ABSOLUTE MAXIMUM RATINGS (Ta=25â, unless otherwise specified)
www.unisonic.com.tw
Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-253.A
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