UTD413_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – P-CHANNEL ENHANCEMENT MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UTD413
P-CHANNEL
ENHANCEMENT MODE
 DESCRIPTION
The UTD413 can provide excellent R_DS(ON) and low gate charge
by using UTC’s advanced trench technology. The UTD413 is well
suited for high current load applications with the excellent thermal
resistance of the TO-252 package. Standard Product UTD413 is
Pb-free.
 FEATURES
* R_DS(ON) < 45 mΩ @ V_GS=-10V, I_D=-12A
* R_DS(ON) < 69 mΩ @ V_GS=-4.5V, I_D=-8 A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
 SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
-
UTD413G-AA3-R
UTD413L-TN3-R
UTD413G-TN3-R
UTD413L-TND-R
UTD413G-TND-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-252
TO-252D
Pin Assignment
123
GDS
GDS
GDS
Packing
Tape Reel
Tape Reel
Tape Reel
UTD413G-AA3-R
(1)Packing Type
(2)Package Type
(3)Green Package
(1) R: Tape Reel
(2) AA3: SOT-223, TN3: TO-252, TND: TO-252D
(3) G: Halogen Free and Lead Free, L: Lead Free
 MARKING
SOT-223
TO-252 / TO-252D
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