UTCMPSH10 Datasheet, PDF (1/1 Pages) Unisonic Technologies – HIGH VOLTAGE TRANSISTOR

UTCMPSH10 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MPSH10 is desinged for using as VHF and
UHF oscillators and VHf Mixer in a tuner of a TV
receiver.
1
TO-92
1: EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
3
V
Total Power Dissipation(Ta=25°C)
Pc
250
mW
Collector current
Ic
50
mA
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage
BVCBO
Ic=100µA
30
Collector-emitter breakdown voltage BVCEO
Ic=1mA
25
Emitter-base breakdown voltage
BVEBO
IE=10µA
Collector cut-off current
ICBO
VCB=25V
Emitter cut-off current
IEBO
VEB=2V
Collector-emitter saturation voltage VCE(SAT)
IC=4mA,IB=400µA
Collector-emitter on voltage
VCE(ON)
VCE=10V,IC=4mA
DC current gain
hFE
VCE=10V,IC=4mA,f=100MHZ 60
Output capacitace
Cob
VCE=10V,f=1MHZ
Current gain bandwidth product
fT
VCE=10V,IC=4mA,f=100MHZ 650
TYP
MAX
3
100
100
500
950
UNIT
V
V
V
nA
nA
mV
mV
0.7 pF
MHZ
UTC UNISONIC TECHNOLOGIES CO. LTD
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