UTCBC337 Datasheet, PDF (1/2 Pages) Unisonic Technologies – SWITCHING AND AMPLIFIER APPLICATIONS

UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC327/328
1
TO-92
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-emitter voltage
VCES
: BC337
50
: BC338
30
Collector-emitter voltage
VCEO
: BC337
45
: BC338
25
Emitter-base voltage
VEBO
5
Collector current (DC)
Ic
800
Collector dissipation
Pc
625
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-emitter breakdown voltage BVCEO
Ic=10mA, IB=0
: BC337
45
: BC338
25
Collector-emitter breakdown voltage BVCES
Ic=0.1mA, VBE=0
: BC337
50
: BC338
30
Emitter-base breakdown voltage
BVEBO
IE=0.1mA, Ic=0
5
Collector Cut-off Current
I_CES
: BC337
VCE=45V, IB=0
: BC338
VCE=25V, IB=0
DC current gain
h_FE1
VCE=1V, Ic=100mA
100
h_FE2
VCE=1V, Ic=300mA
60
Collector-emitter saturation voltage VCE(sat)
Ic=500mA, IB=50mA
TYP
2
2
MAX
100
100
630
0.7
UNIT
V
V
V
V
V
nA
nA
V
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R201-039,B