UTC2SD1616 Datasheet, PDF (1/3 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

UTC 2SD1616/A
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
*Audio frequency power amplifier
*Medium speed switching
1
TO-92
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Storage Temperature
Tstg
Junction Temperature
Tj
Total Power Dissipation (Ta=25°C)
Pc
Collector to Base Voltage: D1616
VCBO
D1616A
Collector to Emitter Voltage: D1616
VCEO
D1616A
Emitter to Base Voltage
VEBO
Collector Current (DC)
Ic
Collector Current (*Pulse)
Ic
Note: (*) Pulse width≤10ms, Duty cycle<50%
VALUE
-55 ~+150
150
750
60
120
50
60
6
1
2
UNIT
°C
°C
mW
V
V
V
A
A
CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage VCE(SAT)
Base-Emitter Saturation Voltage VBE(SAT)
Base Emitter On Voltage
VBE(ON)
DC Current Gain: D1616
hFE1
D1616A
hFE2
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Turn On Time
ton
TEST CONDITIONS
VCB=60V
VEB= 6V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=50mA
VCE=2V, IC=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA
VCB=10V, f=1MHz
VCE=10V, IC=100mA
MIN.
600
135
135
81
100
TYP.
0.15
0.9
640
160
0.07
MAX.
100
100
0.3
1.2
700
600
400
19
UNIT
nA
nA
V
V
mV
MHz
pF
us
UTC UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R201-008,A