UTC2SC1815 Datasheet, PDF (1/2 Pages) Unisonic Technologies – AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

UTC2SC1815 NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC NPN
TRANSISTOR
FEATURES
*Collector-Emitter voltage:
BVCEO=50V
*Collector current up to 150mA
* High hFE linearity
*complimentary to 2SA1015
1
TO-92
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
50
Emitter-base voltage
VEBO
5
Collector dissipation(Ta=25°C)
Pc
400
Collector current
Ic
150
Base current
IB
50
Junction Temperature
Tj
125
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
mW
mA
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector cut-off current
ICBO
VCB=60V,IE=0
Emitter cut-off current
IEBO
VEB=5V,Ic=0
DC current gain(note)
hFE1
VCE=6V,Ic=2mA
70
hFE2
VCE=6V,Ic=150mA
25
Collector-emitter saturation voltage VCE(sat)
Ic=100mA,IB=10mA
Base-emitter saturation voltage
VBE(sat)
Ic=100mA,IB=10mA
Current gain bandwidth product
fT
VCE=10V,Ic=50mA
80
Output capacitance
Cob
VCB=10V,IE=0,f=1MHz
Noise Figure
NF
Ic=-0.1mA,VCE=6V
RG=10kΩ,f=100Hz
TYP
0.1
2.0
1.0
MAX
100
100
700
0.25
1.0
3.0
1.0
UNIT
nA
nA
V
V
MHz
pF
dB
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R201-006,A