UTC2SB834 Datasheet, PDF (1/1 Pages) Unisonic Technologies – HIGH VOLTAGE TRANSISTOR

UTC2SB834 PNP EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
Low frequency power amplifier applications.
1
TO-220
1:BASE 2: COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNIT
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Total Power Dissipation(Ta=25°C)
Pc
30
W
Collector current
Ic
3
A
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Base Current
IB
0.5
A
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-emitter breakdown voltage BVCEO
Ic=50mA
60
Collector cut-off current
ICBO
VCB=60V
Emitter cut-off current
IEBO
VEB=7V
Collector-emitter saturation voltage VCE(SAT)
IC=3A,IB=0.3A
Collector-emitter on voltage
VCE(ON)
VCE=5V,IC=0.5A
DC current gain
hFE1
IC=0.5A,VCE=5V
60
hFE2
IC=3A,VCE=5V
20
Current gain bandwidth product
fT
VCE=5V,IC=0.5A
TYP
0.7
9
MAX
100
100
1
1
300
UNIT
V
µA
µA
V
V
MHZ
CLASSIFICATION of hFE1
RANK
RANGE
O
60-120
Y
100-200
GR
150-300
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R203-014,A