UTC2SB772NL Datasheet, PDF (1/2 Pages) Unisonic Technologies – MEDIUM POWER LOW VOLTAGE TRANSISTOR

UTC2SB772NL PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772NL is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882NL
1
TO-92NL
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-30
Emitter-Base Voltage
VEBO
-5
Collector Dissipation (Ta=25°C)
Pc
0.5
Collector Current (DC)
Ic
-3
Collector Current (PULSE)
Ic
-7
Base Current
IB
-0.6
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
W
A
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-Off Current
ICBO
VCB=-30V,IE=0
Emitter Cut-Off Current
IEBO
VEB=-3V,Ic=0
DC Current Gain(note 1)
hFE1
VCE=-2V,Ic=-20mA
30
hFE2
VCE=-2V,Ic=-1A
100
Collector-Emitter Saturation Voltage VCE(sat)
Ic=-2A,IB=-0.2A
Base-Emitter Saturation Voltage
VBE(sat)
Ic=-2A,IB=-0.2A
Current Gain Bandwidth Product
fT
VCE=-5V,Ic=-0.1A
Output Capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Note 1:Pulse test: PW<300µs, Duty Cycle<2%
TYP
200
150
-0.3
-1.0
80
45
MAX
-1000
-1000
400
-0.5
-2.0
UNIT
nA
nA
V
V
MHz
pF
CLASSIFICATION OF hFE2
RANK
Q
RANGE
100-200
P
160-320
UTC UNISONIC TECHNOLOGIES
E
200-400
CO. LTD ¹
QW-R211-001,A