UTC2SA928A Datasheet, PDF (1/2 Pages) Unisonic Technologies – PNP EPITAXIAL SILICON TRANSISTOR

UTC 2SA928A
PNP EPITAXIAL SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
FEATURES
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SC2328A
1
TO-92NL
1: EMITTER 2: COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-30
Collector-emitter voltage
VCEO
-30
Emitter-base voltage
VEBO
-5
Collector dissipation
Pc
1
Collector current
Ic
-2
Junction Temperature
Tj
150
Storage Temperature
TSTG
-55 ~ +150
UNIT
V
V
V
W
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=-100µA,IE=0
-30
Collector-emitter breakdown voltage BVCEO
Ic=-10mA,IB=0
-30
Emitter-base breakdown voltage
BVEBO
IE=-1mA,Ic=0
-5
Collector cut-off current
ICBO
VCB=-30V,IE=0
Emitter cut-off current
IEBO
VBE=-5V,Ic=0
DC current gain(note)
hFE
VCE=-2V,Ic=-500mA
100
Base-emitter on voltage
VBE(on)
VCE=-2V,Ic=-500mA
Collector-emitter saturation voltage VCE(sat)
Ic=-1.5A,IB=-0.03A
Output capacitace
Cob
VCB =-10V, IE =0,f=1MHz
Current gain bandwidth product
fT
VCE=-2V,Ic=-500mA
TYP
48
120
MAX
-100
-100
320
-1
-2
UNIT
V
V
V
nA
nA
V
V
pF
MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
100-200
Y
160-320
UTC
UNISONIC TECHNOLOGIES CO., LTD. ¹
QW-R211-009,A