UTC2SA1015 Datasheet, PDF (1/2 Pages) Unisonic Technologies – PNP EPITAXIAL SILICON TRANSISTOR

UTC2SA1015 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to 2SC1815
1
TO-92
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
-50
Collector-emitter voltage
VCEO
-50
Emitter-base voltage
VEBO
-5
Collector dissipation
Pc
400
Collector current
Ic
-150
Base current
IB
-50
Junction Temperature
Tj
125
Storage Temperature
TSTG
-65 ~ +150
UNIT
V
V
V
mW
mA
mA
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-base breakdown voltage BVCBO
Ic=-100µA,IE=0
-50
Collector-emitter breakdown voltage BVCEO
Ic=-10mA,IB=0
-50
Emitter-base breakdown voltage
BVEBO
IE=-10µA,Ic=0
-5
Collector cut-off current
ICBO
VCB=-50V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,Ic=0
DC current gain(note)
hFE1
VCE=-6V,Ic=-2mA
70
hFE2
VCE=-6V,Ic=-150mA
25
Collector-emitter saturation voltage VCE(sat)
Ic=-100mA,IB=-10mA
Base-emitter saturation voltage
VBE(sat)
Ic=-100mA,IB=-10mA
Current gain bandwidth product
fT
VCE=-10V,Ic=-1mA
80
Output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Noise Figure
NF
Ic=-0.1mA,VCE=-6V
RG=1kΩ,f=100Hz
TYP
-0.1
4.0
0.5
MAX
-100
-100
400
-0.3
-1.1
7.0
6
UNIT
V
V
V
nA
nA
V
V
MHz
pF
dB
UTC _{UNISONIC TECHNOLOGIES CO. LTD}
1
QW-R201-004,A