UT4446_15 Datasheet, PDF(1/4 Page) Unisonic Technologies – N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

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UT4446_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

UT4446

15A, 30V N-CHANNEL

ENHANCEMENT MODE

ï® DESCRIPTION

The UT4446 uses UTCâs advanced trench technology to

provide excellent RDS(ON), low gate charge and operation with low

gate voltages. This device is suitable for use as a load switch or

in PWM applications.

ï® FEATURES

* RDS(ON) < 8.5mâ¦ @ VGS=10V, ID=15A

* RDS(ON) < 14.5mâ¦ @ VGS=4.5V, ID=11A

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

ï® SYMBOL

2.Drain

Power MOSFET

SOP-8

1.Gate

3.Source

ï® ORDERING INFORMATION

Ordering Number

12NN10G-S08-R

Note: Pin Assignment: G: Gate

D: Drain

Package

SOP-8

S: Source

Pin Assignment

12345678

S S SGDDDD

Packing

Tape Reel

ï® MARKING

www.unisonic.com.tw

1 of 6

QW-R502-251. C

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