UT4422_15 Datasheet, PDF(1/6 Page) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

UT4422_15 Datasheet, PDF (1/6 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

UT4422

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

ï® DESCRIPTION

The UT4422 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

ï® FEATURES

* RDS(ON) < 15 mâ¦ @ VGS =10V, ID =11A

RDS(ON) < 24 mâ¦ @ VGS =4.5 V, ID =10 A

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified

ï® SYMBOL

Power MOSFET

ï® ORDERING INFORMATION

Ordering Number

UT4422G-S08-R

Note: Pin Assignment: G: Gate

D: Drain

Package

SOP-8

S: Source

Pin Assignment

12345678

S S SGDDDD

Packing

Tape Reel

ï® MARKING

www.unisonic.com.tw

1 of 6

QW-R502-206.C

▷