UT4410_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – N-CHANNEL 30-V (D-S) MOSFET

UNISONIC TECHNOLOGIES CO., LTD
UT4410
N-CHANNEL 30-V (D-S) MOSFET
 DESCRIPTION
As advanced N-channel logic level enhancement MOSFET, the
UT4410 is produced using UTC’s high cell density, DMOS trench
technology. which has been specially tailored to minimize the
on-resistance and maintain low gate charge for superior switching
performance.
These devices can be particularly suited for such low voltage
applications: cellular phone and notebook computer power
management and other battery powered circuits where high-side
switching and low in-line power loss are needed in a very small outline
surface mount package.
 FEATURES
* R_DS(ON) < 18 mΩ @ V_GS=10V, I_D=10A
* R_DS(ON) < 20 mΩ @ V_GS=4.5V, I_D=8A
* Ultra low gate charge ( typical 11 nC )
* Low reverse transfer capacitance ( C_RSS = typical 35 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
 SYMBOL
Power MOSFET
 ORDERING INFORMATION
Ordering Number
UT4410G-S08-R
Note: Pin Assignment: G: Gate
D: Drain
Package
SOP-8
S: Source
Pin Assignment
12345678
S S SGDDDD
Packing
Tape Reel
 MARKING
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