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| UT3418_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
UT3418
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
ï® DESCRIPTION
The UT3418 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
ï® FEATURES
* RDS(ON) < 60m⦠@VGS = 10 V
* RDS(ON) < 70m⦠@VGS = 4.5 V
* RDS(ON) < 155m⦠@VGS = 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
ï® SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
ï® ORDERING INFORMATION
Ordering Number
UT3418G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
ï® MARKING
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-226.E
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