 English |
|
|
|
|
|
|
|
| UT3418 Datasheet, PDF (1/3 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
| |||
|
UNISONIC TECHNOLOGIES CO., LTD
UT3418
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
 DESCRIPTION
The UT3418 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
 FEATURES
* RDS(ON) < 60m⦠@VGS = 10 V
* RDS(ON) < 70m⦠@VGS = 4.5 V
* RDS(ON) < 155m⦠@VGS = 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
 SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3418L-AE3-R
UT3418G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
 MARKING
34U
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-226.D
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese