 English |
|
|
|
|
|
|
|
| UT3416_15 Datasheet, PDF (1/3 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
| |||
|
UNISONIC TECHNOLOGIES CO., LTD
UT3416
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
ï® DESCRIPTION
The UTC UT3416 is advanced n-channel enhancement
MOSFET which can provide the designer with the best combination
of excellent RDS (ON), low gate charge and low gate voltages as low
as 1.8V.When it is used as a load switch or in PWM application, the
UTC UT3416 can be considered as an ideal.
ï® FEATURES
* VDS =20 V
* ID =6.5 A
* RDS(ON)<22 m⦠@ VGS=4.5V, ID =6.5A
ï® SYMBOL
Power MOSFET
ï® ORDERING INFORMATION
Ordering Number
UT3416G-AE2-R
UT3416G-AE3-R
Package
SOT-23-3
SOT-23
Pin Assignment
1
2
3
S
G
D
S
G
D
Packing
Tape Reel
Tape Reel
ï® MARKING
34SG
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-325.E
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese