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| UT3416 Datasheet, PDF (1/3 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
UT3416
Preliminary
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
 DESCRIPTION
The UTC UT3416 is advanced n-channel enhancement
MOSFET which can provide the designer with the best combination
of excellent RDS (ON), low gate charge and low gate voltages as low
as 1.8V.When it is used as a load switch or in PWM application, the
UTC UT3416 can be considered as an ideal.
 FEATURES
* VDS =20 V
* ID =6.5 A
* RDS(ON)<22 m⦠@VGS = 4.5 V
* RDS(ON) <26 m⦠@VGS = 2.5 V
* RDS(ON) <34 m⦠@VGS = 1.8 V
 SYMBOL
3.Drain
Power MOSFET
2.Gate
1.Source
 ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3416L-AE3-R
UT3416G-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
 MARKING
34S
L: Lead Free
G: Halogen Free
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-325.c
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