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| UT3414_15 Datasheet, PDF (1/4 Pages) Unisonic Technologies – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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UNISONIC TECHNOLOGIES CO., LTD
UT3414
N-CHANNEL ENHANCEMENT
MODE
ï® DESCRIPTION
The UT3414 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate voltages
as low as 1.8V. This device is suitable for use as a load switch or in
PWM applications.
ï® FEATURES
* RDS(ON) < 50m⦠@VGS = 4.5V
* RDS(ON) < 63m⦠@VGS = 2.5V
* RDS(ON) < 87m⦠@VGS = 1.8V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
ï® SYMBOL
Power MOSFET
ï® ORDERING INFORMATION
Ordering Number
UT3414G-AE3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
ï® MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-248.F
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